0.8μm 700V BCD G3S
Overview
0.8μm 700V BCD G3S is one of CSMC's high voltage process platforms. It is a simple 700V high voltage process with a few masking layers. In addition to dual gate oxide, double metal and 0.8 micron drawn gate length process for digital applications, process modules are available for normal and isolated 5V low volt, 40V middle volt drain-source CMOS transistors, 700V LDMOS for power switch, 700V Dep. NMOS/ smart JFET for start-up circuit, and high resistance poly resistors, zener diode.
Key Features
- 0.8 micron front-end, 0.5 micron back-end design rule
- Modular concept (HR/ Zener / BJT / 700V JFET/ Special require)
- 500V LDMOS (BVds>550V)/ 650V LDMOS (BVds>700V)/700V LDMOS (BVds>750V)
- JFET Voff: -9V/-25V
- High value poly resistor; 1K or 3K
Applications
- Off-line power (AC/DC)
- LED driver
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0.8μm 40V HV Power Analog
Overview
0.8μm 40V HV is CSMC's new platform for high voltage process. It is the simplest high voltage process with least masking layers. In addition to dual gate oxide, dual poly and quadruple metal and 0.8 micron drawn gate length process for HV applications. Process modules are available for normal and isolated 5V low volt, 25V or 40V high volt drain-source CMOS transistors, and high resistance poly resistors, zener diode, etc.
Key Features
- 5V logic layout & performance compatible with the industry standard
- 0.8 micron front-end, 0.35 micron back-end design rule
- Epi process for isolated devices
- Modular concept (HR/ Zener / BJT / Special require)
- Vgs/Vds=5V/25 or Vgs/Vds=5V/40V，Vgs/Vds=25V/25 or Vgs/Vds=40V/40V HVCMOS
- High value poly resistor
- I/O cell library with 2KV HBM ESD protection levels
Applications
- LCD driver/LED driver
- Power management product
- Battery protection IC
